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WirelessDevNet.com Press Release
RFMD Introduces Portfolio of 48V High Power GaN Transistors
HONOLULU--RF Micro Devices, Inc. (NASDAQ: RFMD), a global leader in the design and manufacture of high-performance radio systems and solutions for applications that drive mobile communications, today announced the introduction of the RF393X family of 48V gallium nitride (GaN) power transistors. The RF393X product family offers power performance from 10W to 120W and very wide tunable bandwidth—demonstrating the superior combination of high power and bandwidth offered by RFMD’s GaN technology versus competing GaAs and silicon LDMOS technologies.
RFMD’s RF393X product family is comprised of five 48V GaN unmatched power transistors, each of which deliver gain in the range of 14dB to 16dB and high peak drain efficiency of greater than 65 percent at 2.1GHz. The superior performance characteristics of RFMD’s GaN power transistors make them ideal for wideband, high efficiency power amplifier applications, such as broadcast television, wireless infrastructure, high power radar, aerospace and avionics. RFMD estimates the total addressable market for GaN high power semiconductors is approximately $1 billion, of which the market for GaN unmatched power transistors is approximately $150 million. The Company is engaged with top-tier customers in multiple markets and expects to commence production in the second half of calendar 2007.
Bob Bruggeworth, RFMD President and CEO, said, “RFMD is positioned to capture significant market share in the $1 billion high power semiconductor market. We enjoy unparalleled customer relationships in the wireless semiconductor industry, we are an industry leader in compound semiconductor manufacturing, and we are the world’s leading manufacturer of cellular power amplifiers. We are leveraging these core competencies as we expand our GaN product portfolio to drive new growth opportunities in multiple high-growth markets.”
RFMD is developing three families of high voltage GaN products. In addition to GaN power transistors, the Company is developing high power GaN RF integrated circuits (RFICs) and high power GaN matched transistors. The high power GaN RFICs are fully matched high power amplifiers that deliver high efficiency over multiple octaves of bandwidth and are suitable for applications such as military communications, public mobile radio and software definable radios (SDRs). The high power GaN matched transistors include internal matching elements to improve impedance and efficiency and are suitable for applications such as high power radar and infrastructure for WCDMA and WiMAX.
RFMD is demonstrating the power performance of its 48V GaN transistor technology at the IEEE MTT-S International Microwave Symposium 2007, June 5-7, at the Honolulu Convention Center in Honolulu, Hawaii, in Booth 801.
About RFMD: RF Micro Devices, Inc. (NASDAQ: RFMD) is a global leader in the design and manufacture of high-performance radio systems and solutions for applications that drive mobile communications. RFMD’s power amplifiers, transmit modules, cellular transceivers and system-on-chip (SoC) solutions enable worldwide mobility, provide enhanced connectivity and support advanced functionality in current- and next-generation mobile handsets, cellular base stations, wireless local area networks (WLANs) and global positioning systems (GPS). Recognized for its diverse portfolio of state-of-the-art semiconductor technologies and vast RF systems expertise, RFMD is a preferred supplier enabling the world’s leading mobile device manufacturers to deliver advanced wireless capabilities that satisfy current and future market demands.
Headquartered in Greensboro, N.C., RFMD is an ISO 9001- and ISO 14001-certified manufacturer with worldwide engineering, design, sales and service facilities. RFMD is traded on the NASDAQ Global Select Market under the symbol RFMD. For more information, please visit RFMD’s web site at www.rfmd.com.
This press release includes "forward-looking statements" within the meaning of the safe harbor provisions of the Private Securities Litigation Reform Act of 1995. These forward-looking statements include, but are not limited to, statements about our plans, objectives, representations and contentions and are not historical facts and typically are identified by use of terms such as "may," "will," "should," "could," "expect," "plan," "anticipate," "believe," "estimate," "predict," "potential," "continue" and similar words, although some forward-looking statements are expressed differently. You should be aware that the forward-looking statements included herein represent management's current judgment and expectations, but our actual results, events and performance could differ materially from those expressed or implied by forward-looking statements. We do not intend to update any of these forward-looking statements or publicly announce the results of any revisions to these forward-looking statements, other than as is required under the federal securities laws. RF Micro Devices' business is subject to numerous risks and uncertainties, including variability in quarterly operating results, the rate of growth and development of wireless markets, risks associated with the operation of our wafer fabrication facilities, molecular beam epitaxy facility, assembly facility and test and tape and reel facilities, our ability to attract and retain skilled personnel and develop leaders, variability in production yields, our ability to reduce costs and improve gross margins by implementing innovative technologies, our ability to bring new products to market, our ability to adjust production capacity in a timely fashion in response to changes in demand for our products, dependence on a limited number of customers, and dependence on third parties. These and other risks and uncertainties, which are described in more detail in RF Micro Devices' most recent Annual Report on Form 10-K filed with the Securities and Exchange Commission, could cause actual results and developments to be materially different from those expressed or implied by any of these forward-looking statements.
RF MICRO DEVICES® and RFMD® are trademarks of RFMD, LLC. All other trade names, trademarks and registered trademarks are the property of their respective owners.
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